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	Semiconductor laser
	UENO SHINSUKE; ASATA SUSUMU
	1988-08-04
著作权人	NEC CORP
专利号	JP1988188986A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser which exhibits an excellent property of reproducibility and reliability at a low threshold and with the high efficiency as well by causing a change of a band gap in a heterojunction part at least among heterojunction that are formed between respective layers to vary in the form of the inclination. CONSTITUTION:A double-heterojunction structure is composed of an active layer 13 having thickness that is less than several times of wavelength in a tube as well as the first and second guide layers 12 and 14 having band gaps that are wider than that of the active layer and having the quality where its refractive index is small and then block layers 15 where their band gaps are narrow and they have different polarity are prepared at both sides of a stripe-like carrier injection region 17 and further a laminated layer structure is formed so that it is converted by the third guide layer 18. Being interposed between the above laminated layer and the first and second clad layer 11 and 19, the band gaps of which are wider than those of respective guide layers and the refractive indexes of which are small, the first clad layer 11 is formed on a semiconductor substrate 10 at the semiconductor substrate side. A change of the band gap at a heterojunction part at least among the respective heterojunctions formed between respective layers is allowed to vary in the form of the inclination.
公开日期	1988-08-04
申请日期	1987-01-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87165]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	UENO SHINSUKE,ASATA SUSUMU. Semiconductor laser. JP1988188986A. 1988-08-04.

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