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	Semiconductor laser
	KOTAKI YUJI
	1988-01-05
著作权人	FUJITSU LTD
专利号	JP1988000185A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To inhibit field intensity difference in a resonator and index difference even under the state in which oscillation is grown, to ensure mode selectivity and to obtain an optical output having a stable single wavelength by forming a plurality of and an odd number of phase shifts corresponding to phase difference of 1/2pi to light waves having a Bragg wavelength to the corrugations. CONSTITUTION:With corrugations 4, photo-resists such as a positive resist and a negative resist are applied alternately on the upper surface of an N-type InP clad layer 3 in a striped manner prior to the epitaxial growth of an N-type InGaAsP guide layer 5, and exposed through a two-beam interference method by helium-cadmium (He-Cd) laser beams and a mask is shaped, and phase shifts of 1/2LAMBDA are each formed at the center (1/2L) and positions (S, L-S) at a distance S from respective end surface at a period LAMBDA 200nm corresponding to the order m= Where cavity length L=300nm, S=100nm and a coupling coefficient kappa=60cm are determined, and kappaL=8 is decided. Accordingly, even when kappaL of a distributed feedback type laser is large, the mode selectivity of the laser is also ensured after oscillation growth, thus stably acquiring single wavelength beams having a large output.
公开日期	1988-01-05
申请日期	1986-06-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87139]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	KOTAKI YUJI. Semiconductor laser. JP1988000185A. 1988-01-05.

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