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	HINO ISAO
	1993-08-26
著作权人	NIPPON ELECTRIC CO
专利号	JP1993058594B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To obtain visible-light semiconductor light-emitting element having excellent performance and reliability by forming a first conduction type third GaAs layer onto the surface of a first GaAs layer not coated with a second GaAs layer shaped onto the surface except one part in the surface of the first conduction type first GaAs layer and the second GaAs layer in double hetero- structure. CONSTITUTION:An n-GaAs buffer layer 42, an n-(Al0.3Ga0.7))0.5In0.5P clad layer 43, an un-doped Ga0.5In0.5P active layer 44, a p-(Al0.3Ga0.7)0.5In0.5P clad layer 45, a p-GaAs layer 46 and an n-GaAs layer 47 are grown on an n-GaAs substrate 4 The n-GaAs layer 47 is etched selectively by using a photo-resist 52 to form a striped opening 5 A p-GaAs layer 48 is grown. AsH3 may be flowed ona MOVPE method in order to protect the substrate at that time. A compound containing Al is not exposed to the surface at that time. Accordingly, a p-GaAs film obtained in this manner is extremely excellent, and a superior electrode is shaped because of an excellent crystal, thus improving the element characteristics and reliability.
公开日期	1993-08-26
申请日期	1984-09-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86712]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	HINO ISAO. -. JP1993058594B2. 1993-08-26.

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