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	InP based VCSEL with zinc-doped tunnel-junction and diffusion blocking layer
	BOUR, DAVID; LIN, CHAOKUN; TAN, MICHAEL; PEREZ, BILL
	2006-07-12
著作权人	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD
专利号	EP1679774A2
国家	欧洲专利局
文献子类	发明申请
其他题名	InP based VCSEL with zinc-doped tunnel-junction and diffusion blocking layer
英文摘要	The invention relates to a laser comprising a bottom mirror; an active region comprising a quantum well layer; a first layer of a p-type semiconductor; a barrier layer; a first tunnel junction layer; a second tunnel junction layer; and a top mirror. All of the first layer, the barrier layer, and the first and second tunnel junction layers comprise a material of a InP family of materials. The first and second tunnel junction layers are adjacent to one another and form a tunnel junction, wherein the tunnel junction and the active region lie between the top and bottom mirrors.
公开日期	2006-07-12
申请日期	2003-10-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85427]
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD
推荐引用方式 GB/T 7714	BOUR, DAVID,LIN, CHAOKUN,TAN, MICHAEL,et al. InP based VCSEL with zinc-doped tunnel-junction and diffusion blocking layer. EP1679774A2. 2006-07-12.

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