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	Semiconductor light-emitting element
	KAWADA SEIJI
	1987-05-27
著作权人	NEC CORP
专利号	JP1987115791A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light-emitting element
英文摘要	PURPOSE:To improve the reliability, by substantially obviating the presence of an oxide layer on the surface of crystals immediately before performing the imbedding growth thereof for preventing crystal dislocation in the imbedded layer due to the presence of the oxide. CONSTITUTION:A semiconductor light-emitting element according to the invention has a double hetero structure in which an active layer 14 is sandwitched by upper and lower clad layers 13 and 15 of a compound semiconductor containing aluminum. The element has another compound semiconductor layer 16 on the double hetero-structure, the compound semiconductor layer 16 having the same type of conductivity with the upper clad layer 15 and an energy gap larger than that of the active layer 14 and not containing aluminium. The element further comprises a current constricting antiwaveguide layer 17 having a different type of conductivity from that of the upper clad layer and a part of which is removed in a stripe shape. The element further comprises a cap layer 19 having a larger energy gap and a lower refractive index than those of the active layer 14 and the same type of conductivity with the upper clad layer 15. By providing the semiconductor layer 16 not containing aluminium on the clad layer 15, the clad layer 15 can be prevented from being exposed to the atmosphere when the linear aperture 22 is formed. As a result, the reliability of the semiconductor light-emitting element can be improved.
公开日期	1987-05-27
申请日期	1985-06-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85322]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KAWADA SEIJI. Semiconductor light-emitting element. JP1987115791A. 1987-05-27.

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