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	Semiconductor laser device
	SHIGIHARA, KIMIO
	2015-12-01
著作权人	MITSUBISHI ELECTRIC CORPORATION
专利号	US9203216
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device
英文摘要	A semiconductor laser device includes an n-type semiconductor substrate, an n-type cladding layer laminated on the semiconductor substrate, an n-side light guiding layer laminated on the n-type cladding layer, an active layer laminated on the n-side light guiding layer, a p-side light guiding layer laminated on the active layer, and a p-type cladding layer laminated on the p-side light guiding layer. The sum of the thicknesses of the n-side and p-side light guiding layers is such that the first and higher order modes of oscillation can occur in the crystal growth direction. A low refractive index layer having a lower refractive index than the n-type cladding layer is located between the n-side light guiding layer and the n-type cladding layer, and the active layer is displaced from the lateral center plane of the light guiding layer structure toward the p-type cladding layer.
公开日期	2015-12-01
申请日期	2013-12-17
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85019]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORPORATION
推荐引用方式 GB/T 7714	SHIGIHARA, KIMIO. Semiconductor laser device. US9203216. 2015-12-01.

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