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	Semiconductor laser
	KAGAWA HITOSHI; HATTORI AKIRA
	1988-08-04
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1988188984A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To have a semiconductor laser through which a high S/N ratio is stably obtained for an extensive light return rate by establishing reflectivity at a laser outgoing beam end face of a resonator in the ratio of 21%+ or -3%. CONSTITUTION:Reflectivity at a laser outgoing beam end face is optionally established within the extent of 21%+ or -3% with an end face protecting film. A light return rate is so different according to a state of using that its characteristic eliminates the need for improving an S/N ratio by changing coating reflectivity of a laser outgoing end face, that is, by changing the material quality or the film thickness of the end face protecting film at the laser outgoing beam end face and a stable high S/N ratio is always obtained by applying its characteristic even to optical systems of a variety of optical disk systems where a light return rate vary extensively.
公开日期	1988-08-04
申请日期	1987-01-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85006]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	KAGAWA HITOSHI,HATTORI AKIRA. Semiconductor laser. JP1988188984A. 1988-08-04.

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