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	Manufacture of semiconductor laser
	ASAGA TATSUYA
	1991-05-29
著作权人	SEIKO EPSON CORP
专利号	JP1991126284A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To enable the position of a window region within a semiconductor wafer to be judged accurately and easily by providing the window region with a band gap which is larger than that of an active layer near the end surface of a resonator of the active layer and by oxidizing the surface of an aluminum layer which is provided on the upper semiconductor layer. CONSTITUTION:A semiconductor buffer layer 103, a semiconductor lower clad layer 104, a semiconductor active layer 109, a semiconductor upper clad layer 105, and a semiconductor contact layer 106 are lamination-formed in sequence on a semiconductor substrate 102. when forming an active layer, a window region 110 with much aluminum content is formed only near a cleavage surface. An Al film 112 is accumulated on the upper semiconductor layer, the surface is oxidized for achieving passivation, thus forming an inverse mesa rib only at a part without any Al film. Since the Al film remains after all processes, the position of the window region can be easily judged from appearance even in a semiconductor layer in buried structure and a cleavage can be formed.
公开日期	1991-05-29
申请日期	1989-10-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84681]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	ASAGA TATSUYA. Manufacture of semiconductor laser. JP1991126284A. 1991-05-29.

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