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	Semiconductor laser
	UENO SHINSUKE
	1987-08-06
著作权人	NEC CORP
专利号	JP1987179191A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To maintain basic lateral mode oscillation by a method wherein a carrier diffusion length in an active layer is made shorter than a half of the difference between 2nd trench width and 1st trench width and a carrier life time in the active region in the active layer is made longer than a carrier life time in the depletion layer region in the active layer. CONSTITUTION:As a carrier diffusion length is less than a half of the difference be tween the width of refractive index distribution and the width of a carrier injecting region which determines the width of gain distribution and, moreover, a refractive index at the time of laser oscillation is relatively small, an effect which promotes self-exciting oscillation is provided. If a reverse bias is applied between an n-type ohmic contact 23 and a p-type ohmic contact 24, a reverse bias is applied to an Zn diffused region 21 and a depletion layer and a depletion layer is spread. If the depletion layer is spread into an active layer, the active layer containing the depletion layer serves as a large light absorbing region. Further, excited carrier created by absorption of a laser beam are attracted by the reverse bias and hence their life time is reduced suddenly. Therefore, as the region to which the reverse bias is applied has characteristics of a saturable absorption unit, it is equivalent to introducing the satura ble absorbing unit into a resonator to apply the reverse bias to the structure.
公开日期	1987-08-06
申请日期	1986-01-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84638]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	UENO SHINSUKE. Semiconductor laser. JP1987179191A. 1987-08-06.

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