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	Semiconductor laser and method for manufacturing the same
	TATSUHIKO, NIINA; KEIICHI, YODOSHI
	1988-12-07
著作权人	SANYO ELECTRIC CO., LTD.
专利号	EP0091599B1
国家	欧洲专利局
文献子类	授权发明
其他题名	Semiconductor laser and method for manufacturing the same
英文摘要	A semiconductor laser includes an oscillation layer comprising a first clad layer, an active layer and a second clad layer which are comprised of gallium aluminum arsenide and deposited, in this order, on a semiconductor substrate. A cap layer in a stripe geometry for narrowing a width of a current path is deposited on a second clad layer. A buried layer comprised of II-VI compound such as zinc selenide, zinc sulfide and the like is formed on the second clad layer other than the portion on which the cap layer is formed, so that the cap layer is buried. The buried layer is formed utilizing a low temperature deposition such as a molecular beam epitaxy.
公开日期	1988-12-07
申请日期	1983-03-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84472]
专题	半导体激光器专利数据库
作者单位	SANYO ELECTRIC CO., LTD.
推荐引用方式 GB/T 7714	TATSUHIKO, NIINA,KEIICHI, YODOSHI. Semiconductor laser and method for manufacturing the same. EP0091599B1. 1988-12-07.

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