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	Manufacture of semiconductor laser
	SHIMA AKIHIRO; SUZAKI WATARU
	1987-12-09
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1987283685A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To sufficiently provide a difference from the thickness of a P-type AlGaAs active layer in an element by providing a groove on a wide ridge, then sequentially growing a clad layer and an active layer on the narrow and wide ridges to reduce the thickness of the active layer on the end as thin as possible. CONSTITUTION:When a P-type AlGaAs clad layer 2 is liquid grown on a substrate 1 formed with a groove 9 on a ridge 8b, a flat P-type AlGaAs clad layer 2 is grown on a ridge 8a. A P-type AlGaAs clad layer 2b is grown in a slightly recessed state as compared with the layer 2 therearound on the groove 9. Then, when a P-type AlGaAs active layer 3 is grown, a P-type AlGaAs active layer 3a is grown by a ridge effect in reduced thickness on the ridge 8a, and so grown as to bury the recess formed by a P-type AlGaAs clad layer 2b, and this part is increased in thickness. Thereafter, the layers are sequentially grown to form a semiconductor laser.
公开日期	1987-12-09
申请日期	1986-05-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84316]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	SHIMA AKIHIRO,SUZAKI WATARU. Manufacture of semiconductor laser. JP1987283685A. 1987-12-09.

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