Semiconductor optical amplifier | |
KURUMA NITSUSHIYUN | |
1989-12-27 | |
著作权人 | 日本電気株式会社 |
专利号 | JP1989321675A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor optical amplifier |
英文摘要 | PURPOSE:To facilitate production, and to improve even coupling efficiency with a single mode fiber by specifying a distance from an active region to an electrode. CONSTITUTION:The active region 15 of a semiconductor optical amplifier having the active region having a confinement effect to signal light has a window region 16 formed by breaking near one or both end faces. When the waveform of signal light 20 is represented by lambda, the length of the window region 16 from the breaking section to the end face of the active region 15lw, the ratio of the circumference of a circle to its diameter pi, the refractive index of the window region 16 from the breaking section to the end face of the active region 15 n, and the diameter of signal light beams in the thickness direction of an active layer in the breaking section of the active region 15 W0, distances from the active region 15 to electrodes 11, 19 are made larger than lambdalw/2pinW0. Accordingly, the coupling efficiency of a single mode fiber can be improved. |
公开日期 | 1989-12-27 |
申请日期 | 1988-06-23 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/84129] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 日本電気株式会社 |
推荐引用方式 GB/T 7714 | KURUMA NITSUSHIYUN. Semiconductor optical amplifier. JP1989321675A. 1989-12-27. |
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