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	Semiconductor laser device
	HATAKOSHI, GENICHI; ITAYA, KAZUHIKO; NARITSUKA, SHIGEYA; ISHIKAWA, MASAYUKI; OKUDA, HAJIME; SHIOZAWA, HIDEO; WATANABE, YUKIO; OHBA, YASUO; KOKUBUN, YOSHIHIRO; UEMATSU, YUTAKA
	1991-07-30
著作权人	KABUSHIKI KAISHA TOSHIBA
专利号	US5036521
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device
英文摘要	In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities: 0.015.DELTA.sup.1/2
公开日期	1991-07-30
申请日期	1989-11-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84084]
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	HATAKOSHI, GENICHI,ITAYA, KAZUHIKO,NARITSUKA, SHIGEYA,et al. Semiconductor laser device. US5036521. 1991-07-30.

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