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	Semiconductor laser device and method of manufacturing the same
	MOTOHISA, HIRAO; ATSUTOSHI, DOI; MICHIHARU, NAKAMURA; SHINJI, TSUJI; TAKAO, MORI
	1984-08-15
著作权人	HITACHI, LTD.
专利号	EP0039886B1
国家	欧洲专利局
文献子类	授权发明
其他题名	Semiconductor laser device and method of manufacturing the same
英文摘要	A buried-heterostructure semiconductor laser including a mesa-shaped optical confinement region having an active layer (3) and a clad layer (4) and disposed on a semiconductor substrate (1); a burying layer (6, 7) burying both side surfaces of the region; and at least one p-n junction (12) so formed inside the burying layer (6,7) in parallel to the active layer (3) as to be brought under the reversely biased state during the operation of the laser; wherein surface protection semiconductor layers (5, 8) are formed on the mesa-shaped optical confinement region and on the burying layer (6, 7), respectively, for protecting the semiconductor assembly in the arrangement such that these surface protection semiconductor layers (5, 8) do not come into direct contact with each other. Even if the forbidden band gaps of these surface protection semiconductor layers (5,8) are relatively small, it is possible to realize a semiconductor laser having an extremely small leakage current and reduced variance of threshold current values, while protecting the surface of the multi-layer semiconductor layers.
公开日期	1984-08-15
申请日期	1981-05-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83868]
专题	半导体激光器专利数据库
作者单位	HITACHI, LTD.
推荐引用方式 GB/T 7714	MOTOHISA, HIRAO,ATSUTOSHI, DOI,MICHIHARU, NAKAMURA,et al. Semiconductor laser device and method of manufacturing the same. EP0039886B1. 1984-08-15.

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