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	Semiconductor laser element and its driving method
	IKEDA SOTOMITSU
	1992-08-28
著作权人	キヤノン株式会社
专利号	JP1992240791A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element and its driving method
英文摘要	PURPOSE:To simultaneously oscillate and selectively oscillate many wavelength whose tunable width is large and which are dynamically stable by a method wherein a plurality of diffraction gratings which selectively reflect light at wavelengths corresponding to individual band gaps of a plurality of light- emitting layers and whose cycle is different are installed inside the same optical waveguide. CONSTITUTION:An n-AlxcGal-xcAs clad layer 3, an optical-waveguide structure part 4 and an optical-waveguide layer 10 are formed on an n-GaAs substrate 1; after that, two kinds of diffraction gratings 11, 12 are formed by two interference exposure methods and two etching operations. When a lambda/4 shift is formed in the cyclic structure of the individual diffraction gratings at this time, a more stable longitudinal-mode oscillation is obtained. Then, a p-AlxcGal-xcAs clad layer 5 and a p-GaAs cap layer 6 are formed; after that, a semiconductor laser is worked and electrodes 7 are formed. An electric current is injected independently into individual regions [I], [II]; a laser beam having a plurality of wavelengths whose wavelength is different in steps of about 50nm is output from a single radiant edge.
公开日期	1992-08-28
申请日期	1991-01-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83806]
专题	半导体激光器专利数据库
作者单位	キヤノン株式会社
推荐引用方式 GB/T 7714	IKEDA SOTOMITSU. Semiconductor laser element and its driving method. JP1992240791A. 1992-08-28.

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