QQ客服 官方微博 反馈留言

	Semiconductor laser device
	YAMAMOTO, SABURO; MORIMOTO, TAIJI; MIYAUCHI, NOBOYUKI; MAEI, SHIGEKI
	1988-12-13
著作权人	SHARP KABUSHIKI KAISHA
专利号	US4791649
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device
英文摘要	A multilayered crystal structure in a semiconductor laser device contains an active layer for laser oscillation on a V-stripe channeled substrate having a current-blocking layer thereon. The active layer further includes regions by means of which carriers within the active layer are prevented from diffusing outside of the active layer. These regions are disposed facing each other with an optical waveguide therebetween which is formed by the absorption of light by the portions of the current-blocking layer which are positioned at both sides of the striped channel. The distance between the regions is narrower than the width of the optical waveguide in the vicinity of both facets and wider than the width of the optical waveguide inside of both facets.
公开日期	1988-12-13
申请日期	1986-07-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83708]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	YAMAMOTO, SABURO,MORIMOTO, TAIJI,MIYAUCHI, NOBOYUKI,et al. Semiconductor laser device. US4791649. 1988-12-13.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。