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	Composite semiconductor laser device
	SUZUKI AKIRA; TOMITA AKIHISA
	1987-01-12
著作权人	NEC CORP
专利号	JP1987005679A
国家	日本
文献子类	发明申请
其他题名	Composite semiconductor laser device
英文摘要	PURPOSE:To stably perform a self-pulsation without necessity of connecting a load resistor externally with one power source by fusion-bond laminating a semiconductor layer element containing a saturable absorption region which contributes to the self-pulsation in a resonator, and an Si substrate which contains a bias power source of the saturable absorption region. CONSTITUTION:A semiconductor laser element 1 having a saturable absorption region 32 which contributes to a self-pulsation in a resonator is laminated on a silicon substrate 2 having a bias power source for supplying a bias voltage to the region 32. For example, the element 1 is formed of a buffer layer 12, an active layer 13, a clad layer 14, an electrode forming layer 15 epitaxially grown on a semiconductor substrate 11 and a grounding terminal electrode 16, an exciting region electrode 17, a saturable absorption region electrode 18, a region separating groove 19. The substrate 2 is formed of resistance elements 22, 23 a current implanting terminal electrode 24, a saturable absorption region bias electrode 25, a control terminal electrode 26, and electrode separating grooves 27, 28 formed on a high resistance Si substrate 2
公开日期	1987-01-12
申请日期	1985-07-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83704]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	SUZUKI AKIRA,TOMITA AKIHISA. Composite semiconductor laser device. JP1987005679A. 1987-01-12.

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