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	Single filament semiconductor laser with large emitting area
	-
	1983-08-10
著作权人	RCA CORP
专利号	GB2062949B
国家	英国
文献子类	授权发明
其他题名	Single filament semiconductor laser with large emitting area
英文摘要	A semiconductor body 12 of a Group III-V compound or alloy includes a substrate 18 of one conductivity type with a pair of spaced, substantially parallel, dove-tail shaped grooves 24 in a surface 20 thereof. Over the surface of the substrate and the grooves are, in sequence, a buffer epitaxial layer 26 of the one conductivity type, a first confinement epitaxial layer 28 of the one conductivity type, a guide epitaxial layer 30 of the one conductivity type, an active epitaxial layer 32 which is the active recombination layer, a second confinement epitaxial layer 34 of the opposite conductivity type and a cap epitaxial layer 36 of the opposite conductivity type. Heterojunctions are formed between the first confinement layer 28 and the guide layer 30, and between the active layer 32 and second confinement layer 34.; The material of the active layer has an index of refraction larger than that of the materials of the first and second confinement layers, the material of the guide layer has an index of refraction less than that of the active layer but greater than that of each of the confinement layers. The guide layer and active layer each have a region of uniform thickness e.g. 32a, directly over the space 20a between the grooves 24. The resulting laser provides a stable single optical mode filament of light of enhanced depth.
公开日期	1983-08-10
申请日期	1980-04-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83613]
专题	半导体激光器专利数据库
作者单位	RCA CORP
推荐引用方式 GB/T 7714	-. Single filament semiconductor laser with large emitting area. GB2062949B. 1983-08-10.

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