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	Manufacture of semiconductor light-emitting device
	KATO TAKESHI
	1988-05-26
著作权人	FUJITSU LTD
专利号	JP1988122190A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor light-emitting device
英文摘要	PURPOSE:To complete the epitaxial growth of a semiconductor substrate having a good current stricture structure during a single growth process under the gentlest conditions by a method wherein the growth of a current stricture layer of the opposite conductivity type is permitted also on the upper edge of a mesa structure where a region is formed with the impurity concentration which is higher than that of the substrate and the conductivity type of the current stricture layer near the upper edge is reversed. CONSTITUTION:A mask 15 is formed on the surface of a substrate 1; a stripe-like mesa structure is formed by etching. After the mask 15 has been removed, the following layers are grown epitaxially in succession: an n-type InP current stricture layer 3 which is doped with tin (Sn) at a concentration of about 1X10 cm and is formed by, e.g., a liquid phase epitaxial growth method to be a thickness of about 0.2 mum on the mesa; a p-type InP confining layer 4 which is doped with, e.g., cadmium (Cd) at a concentration of about 1X10 cm and is formed to be a thickness of about 5 mm on the mesa; an undoped InGaAsP active layer 5 which is formed to be a thickness of about 0.15 mum on the mesa; an n-type InP confining layer 6; an n-type InP contact layer 7. This semiconductor substrate is heat-treated; impurities of a p type region are diffused; a p-type reversed region 8 which results from ion of the n-type InP current stricture layer 3 near the upper edge into a p-type is formed.
公开日期	1988-05-26
申请日期	1986-11-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83426]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	KATO TAKESHI. Manufacture of semiconductor light-emitting device. JP1988122190A. 1988-05-26.

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