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	Liquid-phase epitaxial growing method
	NAKAI SABUROU
	1982-12-02
著作权人	FUJITSU KK
专利号	JP1982196526A
国家	日本
文献子类	发明申请
其他题名	Liquid-phase epitaxial growing method
英文摘要	PURPOSE:To make no excessive growing solution remain on the surface of a growing layer by using a fixed quantity of growing solution for a unit area of a substrate without applying any pressure to the growing solution. CONSTITUTION:A substrate 3 is arranged on a fixed member 1 and a slider 2 is provided with growing solution reservoirs 4, 5 and 6 wherein growing solutions 7, 8 and 9 amounting to 8g per one square sentimeter are held respectively. Convers 12, 13 and 14 are set thereon. These covers are separated from the growing solutions, and three thin-film semiconductor layers are grown epitaxially in continuation by moving the slider 2 sequentially by operating rods 10 and 1 In this way, the growing solutions are made to expand surely onto the whole substrate and thus an epitaxial growth film of excellent quality can be prepared.
公开日期	1982-12-02
申请日期	1981-05-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83335]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	NAKAI SABUROU. Liquid-phase epitaxial growing method. JP1982196526A. 1982-12-02.

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