Pressure-Assisted Method for the Preparations of High-Quality AaGaS(2) and AgGaGeS4 Crystals for Mid-Infrared Laser Applications

doi:10.1021/acs.inorgchem.8b02626

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院安徽光学精密机械研究所

	Pressure-Assisted Method for the Preparations of High-Quality AaGaS(2) and AgGaGeS4 Crystals for Mid-Infrared Laser Applications
	Huang, Changbao; Mao, Mingsheng; Wu, Haixin; Ma, Jiaren
刊名	INORGANIC CHEMISTRY
	2018-12-03
卷号	57 期号:23 页码:14866-14871
ISSN号	0020-1669
DOI	10.1021/acs.inorgchem.8b02626
通讯作者	Wu, Haixin(hxwu@aiofm.ac.cn)
英文摘要	Recently developed chalcogenides nonlinear optical crystals have potential application in mid- to far infrared laser fields. However, high-quality single crystals are hard to be prepared because of high vapor pressure of sulfur component and decomposition of chalcogenides during the polycrystalline synthesis and single-crystal growth. A pressure assisted technique was performed to prepare stoichiometric AgGaS2 and AgGaGeS4 polycrystalline materials. On the basis of the synthesized polycrystalline materials, high-quality AgGaS2 and AgGaGeS4 single crystals were successfully obtained using the seed directional Bridgman method with a well-designed crucible-capsule technique. These single crystals possess high homogeneity and low absorption coefficient, making it can be applied in nonlinear optical experiments. The pressure-assisted method can also be suitable to prepare other chalcogenide and phosphide compounds. The method of polycrystalline synthesis and single crystals growth described in this work will be helpful for preparing other chalcogenides nonlinear optical crystals.
资助项目	National Natural Science Foundation of China (NSFC)[51702323]
WOS关键词	NONLINEAR-OPTICAL MATERIALS ; PHASE-MATCHING PROPERTIES ; DAMAGE THRESHOLD ; SINGLE-CRYSTALS ; BAND-GAP ; GROWTH ; GENERATION ; PARAMETERS ; CONVERSION ; SN
WOS研究方向	Chemistry
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000452344400046
资助机构	National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/40611]
专题	合肥物质科学研究院_中科院安徽光学精密机械研究所
通讯作者	Wu, Haixin
作者单位	Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Huang, Changbao,Mao, Mingsheng,Wu, Haixin,et al. Pressure-Assisted Method for the Preparations of High-Quality AaGaS(2) and AgGaGeS4 Crystals for Mid-Infrared Laser Applications[J]. INORGANIC CHEMISTRY,2018,57(23):14866-14871.
APA	Huang, Changbao,Mao, Mingsheng,Wu, Haixin,&Ma, Jiaren.(2018).Pressure-Assisted Method for the Preparations of High-Quality AaGaS(2) and AgGaGeS4 Crystals for Mid-Infrared Laser Applications.INORGANIC CHEMISTRY,57(23),14866-14871.
MLA	Huang, Changbao,et al."Pressure-Assisted Method for the Preparations of High-Quality AaGaS(2) and AgGaGeS4 Crystals for Mid-Infrared Laser Applications".INORGANIC CHEMISTRY 57.23(2018):14866-14871.