2D Silicon-Based Semiconductor Si2Te3 toward Broadband Photodetection

doi:10.1002/smll.202006496

	2D Silicon-Based Semiconductor Si2Te3 toward Broadband Photodetection
	Chen, Jiawang 1; Tan, Chaoyang 2,3; Li, Gang 2,3; Chen, Lijie 2,3; Zhang, Hanlin 2,3; Yin, Shiqi 2,3; Li, Ming 1; Li, Liang 2,3,4; Li, Guanghai 1
刊名	SMALL
	2021-04-01
卷号	17
关键词	2D materials photodetector Si Te-2 (3) silicon based transistor
ISSN号	1613-6810
DOI	10.1002/smll.202006496
通讯作者	Li, Liang(liangli@ahu.edu.cn) ; Li, Guanghai(ghli@issp.ac.cn)
英文摘要	Silicon-based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical-optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next-generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon-based 2D materials possess significant advantages in integrating with silicon. Here, a systematic study is reported on the structural, electrical, and optical performance of silicon telluride (Si2Te3) 2D material, a IV-VI silicon-based semiconductor with a layered structure. The ultrawide photoluminescence (PL) spectra in the range of 550-1050 nm reveals the intrinsic defects in Si2Te3. The Si2Te3-based field-effect transistors (FETs) and photodetectors show a typical p-type behavior and a remarkable broadband spectral response in the range of 405-1064 nm. Notably, the photoresponsivity and detectivity of the photodetector device with 13.5 nm in thickness and upon 405 nm illumination can reach up to 65 A W-1 and 2.81 x 10(12) Jones, respectively, outperforming many traditional broadband photodetectors. It is believed this work will excite interests in further exploring the practical application of 2D silicon-based materials in the field of optoelectronics.
资助项目	National Natural Science Foundation of China[51902001] ; Recruitment Program for Leading Talent Team of Anhui Province[2019-16] ; Anhui Provincial Natural Science Foundation[1908085QE17]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000624641400001
资助机构	National Natural Science Foundation of China ; Recruitment Program for Leading Talent Team of Anhui Province ; Anhui Provincial Natural Science Foundation
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/120828]
专题	中国科学院合肥物质科学研究院
通讯作者	Li, Liang; Li, Guanghai
作者单位	1.Univ Sci & Technol China, Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys,Anhui Key Lab Nanomat & Nanotech, Hefei 230031, Peoples R China 2.Anhui Univ, Inst Phys Sci, Hefei 230601, Peoples R China 3.Anhui Univ, Inst Informat Technol, Hefei 230601, Peoples R China 4.Anhui Univ, Photoelect Convers Energy Mat & Devices Key Lab A, Hefei 230601, Peoples R China
推荐引用方式 GB/T 7714	Chen, Jiawang,Tan, Chaoyang,Li, Gang,et al. 2D Silicon-Based Semiconductor Si2Te3 toward Broadband Photodetection[J]. SMALL,2021,17.
APA	Chen, Jiawang.,Tan, Chaoyang.,Li, Gang.,Chen, Lijie.,Zhang, Hanlin.,...&Li, Guanghai.(2021).2D Silicon-Based Semiconductor Si2Te3 toward Broadband Photodetection.SMALL,17.
MLA	Chen, Jiawang,et al."2D Silicon-Based Semiconductor Si2Te3 toward Broadband Photodetection".SMALL 17(2021).