Optically induced insulator-to-semiconductor transition in fluorescent carbon quantum dots measured by terahertz time-domain spectroscopy

doi:10.1016/j.carbon.2020.11.075

	Optically induced insulator-to-semiconductor transition in fluorescent carbon quantum dots measured by terahertz time-domain spectroscopy
	Song, Dan 1,2,3; Tian, Jiekang 4; Xu, Wen 1,5,6; Wen, Hua 1,2; Wang, Chao 1,2; Tang, Ju 5,6; Zhang, Jin 5,6; Guo, Mingming 4
刊名	CARBON
	2021-04-15
卷号	174
关键词	Carbon quantum dots Terahertz time-domain spectroscopy Insulator-to-semiconductor transition
ISSN号	0008-6223
DOI	10.1016/j.carbon.2020.11.075
通讯作者	Xu, Wen(wenxu_issp@aliyun.com) ; Guo, Mingming(guomm57@swu.edu.cn)
英文摘要	The fluorescent carbon quantum dots (FCQDs) are promising for wide applications especially in the field of optoelectronic materials and devices. For these applications, it is essential to examine the optoelectronic properties of FCQDs not only in a solution but also in the form of dry particles. Here we study the optoelectronic properties of dry FCQDs by using terahertz (THz) time-domain spectroscopy (TDS). The THz response of dry FCQDs, which can emit blue (B-CQDs) and red (R-CQDs) lights in solutions under optical excitation, has been measured in temperature range from 80 to 280 K. We find that R-CQDs behaves like an optical insulator in 0.2-1.2 THz range, while B-CQDs experiences insulator-to-semiconductor transition with increasing THz frequency and temperature. The optical conductance and the key sample parameters of B-CQDs are determined. This is the first research work in applying the THz TDS to study the dry CQDs. The findings from this study can be helpful in gaining an in-depth understanding of the physical properties of dry FCQDs. (C) 2020 Elsevier Ltd. All rights reserved.
资助项目	National Natural Science foundation of China[U2067207] ; National Natural Science foundation of China[U1930116] ; National Natural Science foundation of China[81127901] ; Center of Science and Technology of Hefei Academy of Science[2016FXZY002]
WOS研究方向	Chemistry ; Materials Science
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000619304100072
资助机构	National Natural Science foundation of China ; Center of Science and Technology of Hefei Academy of Science
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/120421]
专题	中国科学院合肥物质科学研究院
通讯作者	Xu, Wen; Guo, Mingming
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Chongqing Med Univ, Coll Biomed Engn, Key Lab Ultrasound Med & Engn, Chongqing 400010, Peoples R China 4.Southwest Univ, Sch Chem & Chem Engn, Chongqing 400700, Peoples R China 5.Yunnan Univ, Sch Phys & Astron, Kunming 650000, Yunnan, Peoples R China 6.Yunnan Univ, Yunnan Key Lab Quantum Informat, Kunming 650000, Yunnan, Peoples R China
推荐引用方式 GB/T 7714	Song, Dan,Tian, Jiekang,Xu, Wen,et al. Optically induced insulator-to-semiconductor transition in fluorescent carbon quantum dots measured by terahertz time-domain spectroscopy[J]. CARBON,2021,174.
APA	Song, Dan.,Tian, Jiekang.,Xu, Wen.,Wen, Hua.,Wang, Chao.,...&Guo, Mingming.(2021).Optically induced insulator-to-semiconductor transition in fluorescent carbon quantum dots measured by terahertz time-domain spectroscopy.CARBON,174.
MLA	Song, Dan,et al."Optically induced insulator-to-semiconductor transition in fluorescent carbon quantum dots measured by terahertz time-domain spectroscopy".CARBON 174(2021).