Aliovalent Sc and Li co-doping boosts the performance of p-type NiO sensor
Chang, Junqing1,4,5; Horprathum, Mati3; Wang, Dianhui2; Meng, Gang1,4; Deng, Zanhong1,4; Tong, Bin1,5; Kidkhunthod, Pinit8,9; Dai, Tiantian1,5; Li, Meng1,5; Liu, Hongyu1,5
刊名SENSORS AND ACTUATORS B-CHEMICAL
2021
卷号326
关键词Sc and Li co-doped NiO Nanosheet-flowers Oxygen vacancy defect VOCs sensing
DOI10.1016/j.snb.2020.128834
通讯作者Meng, Gang(menggang@aiofm.ac.cn) ; Fang, Xiaodong(xdfang@aiofm.ac.cn)
英文摘要Though p-type NiO possesses excellent catalytic oxidation property toward volatile organic compounds (VOCs), intrinsic low sensitivity of NiO (arising from the hole accumulation layer configuration in ambient air atmosphere sensor) restricts its promising applications in VOCs detection. In this study, Sc and Li were proposed to modulate the (surface) properties of NiO nanosheet-flowers based sensors. At the optimal 2 at.% Sc and 5 at.% Li doping ratio (Ni0.93Sc0.02Li0.05O), the sensitivity to 100 ppm ethanol is 118.4 (105 times higher than that of pure NiO), which is comparable to or even higher than most of reported NiO based sensors. Moreover, Ni0.93Sc0.02Li0.05O sensor exhibits a low detection limit of 10 ppb, excellent repeatability and long-term stability (similar to 30 % decline of response after 7 months). Apart from regulating the carrier concentration, defect characterizations indicate a noticeable increase of stabilized surface oxygen vacancy (O-V) defects and Ni3+ cations by Sc3+ and Li+ co-doping, which greatly facilitate the adsorption of VOCs molecule (revealed by density functional theory calculation) as well as the subsequent VOCs/NiO interfacial charge interaction, thus contribute to the superior sensing performances. This work demonstrates that co-doping offers an effective avenue for boosting the performances of (p-type) oxide sensors.
资助项目CAS Pioneer Hundred Talents Program of Chinese Academy of Sciences, National Natural Science Foundation of China[11604339] ; CAS Pioneer Hundred Talents Program of Chinese Academy of Sciences, National Natural Science Foundation of China[11674324] ; CAS-NSTDA Joint Research Projects[GJHZ202101] ; CAS-JSPS Joint Research Projects[GJHZ1891] ; Natural Science Foundation of Top Talent of SZTU[2020101] ; National Electronics and Computer Technology Center[P2050221] ; National Key Laboratory of Quantum Optics and Photonic Devices[KF201901] ; Key Lab of Photovoltaic and Energy Conservation Materials[PECL2018QN001] ; Key Lab of Photovoltaic and Energy Conservation Materials[PECL2019QN005]
WOS关键词GAS-SENSING PROPERTIES ; OXYGEN VACANCIES ; NANOPARTICLES ; ZNO ; FE ; NANOFIBERS ; FERROMAGNETISM ; MICROSPHERES ; ENHANCEMENT ; SENSITIVITY
WOS研究方向Chemistry ; Electrochemistry ; Instruments & Instrumentation
语种英语
出版者ELSEVIER SCIENCE SA
WOS记录号WOS:000582806300030
资助机构CAS Pioneer Hundred Talents Program of Chinese Academy of Sciences, National Natural Science Foundation of China ; CAS-NSTDA Joint Research Projects ; CAS-JSPS Joint Research Projects ; Natural Science Foundation of Top Talent of SZTU ; National Electronics and Computer Technology Center ; National Key Laboratory of Quantum Optics and Photonic Devices ; Key Lab of Photovoltaic and Energy Conservation Materials
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/104851]  
专题中国科学院合肥物质科学研究院
通讯作者Meng, Gang; Fang, Xiaodong
作者单位1.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei Inst Phys Sci,Key Lab Photovolta & Energy C, Hefei 230031, Peoples R China
2.Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guilin 541004, Peoples R China
3.Natl Elect & Comp Technol Ctr, Optoelectrochem Sensing Res Team, Pathum Thani 12120, Thailand
4.Adv Laser Technol Lab Anhui Prov, Hefei 230037, Peoples R China
5.Univ Sci & Technol China, Hefei 230026, Peoples R China
6.Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 518118, Peoples R China
7.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Peoples R China
8.Suranaree Univ Technol, Sch Phys, Inst Sci, Res Network NANOTEC SUT Adv Nanomat & Characteriz, Nakhon Ratchasima 30000, Thailand
9.Synchrotron Light Res Inst, 111 Univ Ave, Muang Dist 30000, Nakhon Ratchasi, Thailand
推荐引用方式
GB/T 7714
Chang, Junqing,Horprathum, Mati,Wang, Dianhui,et al. Aliovalent Sc and Li co-doping boosts the performance of p-type NiO sensor[J]. SENSORS AND ACTUATORS B-CHEMICAL,2021,326.
APA Chang, Junqing.,Horprathum, Mati.,Wang, Dianhui.,Meng, Gang.,Deng, Zanhong.,...&Fang, Xiaodong.(2021).Aliovalent Sc and Li co-doping boosts the performance of p-type NiO sensor.SENSORS AND ACTUATORS B-CHEMICAL,326.
MLA Chang, Junqing,et al."Aliovalent Sc and Li co-doping boosts the performance of p-type NiO sensor".SENSORS AND ACTUATORS B-CHEMICAL 326(2021).
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