A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe2-WSe2 Homojunction

doi:10.1021/acsami.0c11456

	A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe2-WSe2 Homojunction
	Tan, Chaoyang 4,5; Wang, Huanhuan 4,5; Zhu, Xiangde 1; Gao, Wenshuai 4,5; Li, Hui 4,5; Chen, Jiawang 4,5; Li, Gang 4,5; Chen, Lijie 4,5; Xu, Junmin 3; Hu, Xiaozong 2
刊名	ACS APPLIED MATERIALS & INTERFACES
	2020-10-07
卷号	12
关键词	lateral homojunction zero-biased photadetector WSe2
ISSN号	1944-8244
DOI	10.1021/acsami.0c11456
通讯作者	Li, Liang(liangli@ahu.edu.cn) ; Zhai, Tianyou(zhaity@hust.edu.cn)
英文摘要	Lateral homojunctions made of two-dimensional (2D) layered materials are promising for optoelectronic and electronic applications. Here, we report the lateral WSe2-WSe2 homojunction photodiodes formed spontaneously by thickness modulation in which there are unique band structures of a unilateral depletion region. The electrically tunable junctions can be switched from nn to pp diodes, and the corresponding rectification ratio increases from about 1 to 1.2 x 10(4). In addition, an obvious photovoltaic behavior is observed at zero gate voltage, which exhibits a large open voltage of 0.49 V and a short-circuit current of 0.125 nA under visible light irradiation. In addition, due to the unilateral depletion region, the diode can achieve a high detectivity of 4.4 x 10(10) Jones and a fast photoresponse speed of 0.18 ms at V-gg = 0 and V-ds = 0. The studies not only demonstrated the great potential of the lateral homojunction photodiodes for a self-power photodetector but also allowed for the development of other functional devices, such as a nonvolatile programmable diode for logic rectifiers.
资助项目	National Natural Science Foundation of China[51902001] ; National Natural Science Foundation of China[21701041] ; Recruitment Program for Leading Talent Team of Anhui Province[2019-16] ; Natural Science Foundation of Anhui Province[1908085QE17]
WOS关键词	FIELD-EFFECT TRANSISTORS ; LIGHT-EMITTING-DIODES ; P-N-JUNCTION ; HETEROSTRUCTURES ; GRAPHENE ; GROWTH ; TRANSPORT
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000579956100054
资助机构	National Natural Science Foundation of China ; Recruitment Program for Leading Talent Team of Anhui Province ; Natural Science Foundation of Anhui Province
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/104603]
专题	中国科学院合肥物质科学研究院
通讯作者	Li, Liang; Zhai, Tianyou
作者单位	1.Chinese Acad Sci, High Magnet Field Lab, Anhui Prov Key Lab Condensed Matter Phys Extreme, Hefei 230031, Peoples R China 2.Huazhong Univ Sci & Technol HUST, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China 3.Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China 4.Anhui Univ, Inst Informat Technol, Minist Educ, Key Lab Struct & Funct Regulat Hybrid Mat, Hefei 230601, Peoples R China 5.Anhui Univ, Inst Phys Sci, Minist Educ, Key Lab Struct & Funct Regulat Hybrid Mat, Hefei 230601, Peoples R China
推荐引用方式 GB/T 7714	Tan, Chaoyang,Wang, Huanhuan,Zhu, Xiangde,et al. A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe2-WSe2 Homojunction[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12.
APA	Tan, Chaoyang.,Wang, Huanhuan.,Zhu, Xiangde.,Gao, Wenshuai.,Li, Hui.,...&Zhai, Tianyou.(2020).A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe2-WSe2 Homojunction.ACS APPLIED MATERIALS & INTERFACES,12.
MLA	Tan, Chaoyang,et al."A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe2-WSe2 Homojunction".ACS APPLIED MATERIALS & INTERFACES 12(2020).