Linear and quadratic magnetoresistance in the semimetal SiP2
Zhou, Yuxing6; Lou, Zhefeng6; Zhang, ShengNan7,8; Chen, Huancheng6; Chen, Qin6; Xu, Binjie6; Du, Jianhua4; Yang, Jinhu1; Wang, Hangdong1; Xi, Chuanying5
刊名PHYSICAL REVIEW B
2020-09-22
卷号102
ISSN号2469-9950
DOI10.1103/PhysRevB.102.115145
通讯作者Fang, Minghu(mhfang@zju.edu.cn)
英文摘要Multiple mechanisms for extremely large magnetoresistance (XMR) found in many topologically nontrivial/trivial semimetals have been theoretically proposed, but experimentally it is unclear which mechanism is responsible in a particular sample. In this paper, by the combination of band structure calculations, numerical simulations of magnetoresistance (MR), Hall resistivity, and de Haas-van Alphen (dHvA) oscillation measurements, we studied the MR anisotropy of SiP2 which is verified to be a topologically trivial, incomplete compensation semimetal. It was found that as magnetic field H is applied along the a axis, the MR exhibits an unsaturated nearly linear H dependence, which was argued to arise from incomplete carriers compensation. For the H parallel to [101] orientation, an unsaturated nearly quadratic H dependence of MR up to 5.88 x 10(4) % (at 1.8 K, 31.2 T) and field-induced up-turn behavior in resistivity were observed, which was suggested due to the existence of hole open orbits extending along the k(x) direction. Good agreement of the experimental results with the simulations based on the calculated Fermi surface (FS) indicates that the topology of FS plays an important role in its MR.
资助项目National Key R&D Program of China[2016YFA0300402] ; National Key R&D Program of China[2015CB921004] ; National Natural Science Foundation of China[NSFC-12074335] ; National Natural Science Foundation of China[11974095] ; Natural Science Foundation of Zhejiang Province[LY16A040012] ; Fundamental Research Funds for the Central Universities ; Chinese Academy of Science, Sharing Service Platform of CAS Large Research Infrastructure[2020-SHMFF-PT-001615] ; NCCR Marvel ; Swiss National Supercomputing Centre (CSCS)[mr27] ; Swiss National Supercomputing Centre (CSCS)[s832]
WOS关键词GIANT MAGNETORESISTANCE ; ULTRAHIGH MOBILITY ; WEAK-LOCALIZATION ; DENSITY ; STATES ; PHASE
WOS研究方向Materials Science ; Physics
语种英语
出版者AMER PHYSICAL SOC
WOS记录号WOS:000571652300002
资助机构National Key R&D Program of China ; National Natural Science Foundation of China ; Natural Science Foundation of Zhejiang Province ; Fundamental Research Funds for the Central Universities ; Chinese Academy of Science, Sharing Service Platform of CAS Large Research Infrastructure ; NCCR Marvel ; Swiss National Supercomputing Centre (CSCS)
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/104253]  
专题中国科学院合肥物质科学研究院
通讯作者Fang, Minghu
作者单位1.Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Peoples R China
2.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
3.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
4.China Jiliang Univ, Dept Appl Phys, Hangzhou 310018, Peoples R China
5.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Peoples R China
6.Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
7.Ecole Polytech Fed Lausanne EPFL, Inst Phys, CH-1015 Lausanne, Switzerland
8.Ecole Polytech Fed Lausanne EPFL, Natl Ctr Computat Design & Discovery Novel Mat MA, CH-1015 Lausanne, Switzerland
推荐引用方式
GB/T 7714
Zhou, Yuxing,Lou, Zhefeng,Zhang, ShengNan,et al. Linear and quadratic magnetoresistance in the semimetal SiP2[J]. PHYSICAL REVIEW B,2020,102.
APA Zhou, Yuxing.,Lou, Zhefeng.,Zhang, ShengNan.,Chen, Huancheng.,Chen, Qin.,...&Fang, Minghu.(2020).Linear and quadratic magnetoresistance in the semimetal SiP2.PHYSICAL REVIEW B,102.
MLA Zhou, Yuxing,et al."Linear and quadratic magnetoresistance in the semimetal SiP2".PHYSICAL REVIEW B 102(2020).
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