Separation and Recovery of Refined Si from Al-Si Melt by Modified Czochralski Method

doi:10.3390/ma13040996

	Separation and Recovery of Refined Si from Al-Si Melt by Modified Czochralski Method
	Li, Jingwei 2,3,4; Li, Juncheng 5; Lin, Yinhe 1; Shi, Jian 2; Ban, Boyuan 2; Liu, Guicheng 6; Yang, Woochul 6; Chen, Jian 2
刊名	MATERIALS
	2020-02-02
卷号	13
关键词	modified Czochralski method refined Si separation Al-Si alloy boron and phosphorus removals distribution mechanism
DOI	10.3390/ma13040996
通讯作者	Lin, Yinhe(linyinhe2009@163.com) ; Chen, Jian(jchen@rntek.cas.cn)
英文摘要	Separation of refined silicon from Al-Si melt is still a puzzle for the solvent refining process, resulting in considerable waste of acid and silicon powder. A novel modified Czochralski method within the Al-Si alloy is proposed. After the modified Czochralski process, a large amount of refined Si particles was enriched around the seed crystalline Si and separated from the Al-Si melt. As for the Al-28%Si with the pulling rate of 0.001 mm/min, the recovery of refined Si in the pulled-up alloy (PUA) sample is 21.5%, an improvement of 22% compared with the theoretical value, which is much larger 1.99 times than that in the remained alloy (RA) sample. The content of impurities in the PUA is much less than that in the RA sample, which indicates that the modified Czochralski method is effective to improve the removal fraction of impurities. The apparent segregation coefficients of boron (B) and phosphorus (P) in the PUA and RA samples were evaluated. These results demonstrate that the modified Czochralski method for the alloy system is an effective way to enrich and separate refined silicon from the Al-Si melt, which provide a potential and clean production of solar grade silicon (SoG-Si) for the future industrial application.
资助项目	National Natural Science Foundation of China[51874272] ; National Natural Science Foundation of China[51804294] ; National Natural Science Foundation of China[U1960101] ; State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology[G201910] ; Science and Technology Major Project of Sichuan Province[2019YFSY0029] ; Anhui Provincial Natural Science Foundation[1808085ME121] ; Key Laboratory of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences[PECL2018QN002] ; Key Laboratory of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences[PECL2019ZD005] ; Key Laboratory of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences[PECL2019KF003] ; CASHIPS Director's Funds[YYJJ201624] ; State Key Laboratory of Pollution Control and Resource Reuse Foundation[PCRRF18017] ; Ministry of Science and ICT through the National Research Foundation of Korea[2019H1D3A2A02100593] ; National Research Foundation of Korea (NRF) - Korea government (MSIT)[2019R1C1C1006310] ; iCET by China Scholarship Council
WOS关键词	GRADE SILICON ; REMOVAL ; SOLIDIFICATION ; PURIFICATION ; ALLOY ; BORON ; PHOSPHORUS ; MECHANISM ; FIELD
WOS研究方向	Materials Science
语种	英语
出版者	MDPI
WOS记录号	WOS:000520419300187
资助机构	National Natural Science Foundation of China ; State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology ; Science and Technology Major Project of Sichuan Province ; Anhui Provincial Natural Science Foundation ; Key Laboratory of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences ; CASHIPS Director's Funds ; State Key Laboratory of Pollution Control and Resource Reuse Foundation ; Ministry of Science and ICT through the National Research Foundation of Korea ; National Research Foundation of Korea (NRF) - Korea government (MSIT) ; iCET by China Scholarship Council
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/103587]
专题	中国科学院合肥物质科学研究院
通讯作者	Lin, Yinhe; Chen, Jian
作者单位	1.Yangtze Normal Univ, Sch Chem Engn, Chongqing 408000, Peoples R China 2.Chinese Acad Sci, Key Lab Photovolta & Energy Conservat Mat, Inst Appl Technol, Hefei Inst Phys Sci, Hefei 230031, Peoples R China 3.Wuhan Univ Sci & Technol, State Key Lab Refractories & Met, Wuhan 430081, Peoples R China 4.Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada 5.Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Jiangsu, Peoples R China 6.Dongguk Univ, Dept Phys, Seoul 04620, South Korea
推荐引用方式 GB/T 7714	Li, Jingwei,Li, Juncheng,Lin, Yinhe,et al. Separation and Recovery of Refined Si from Al-Si Melt by Modified Czochralski Method[J]. MATERIALS,2020,13.
APA	Li, Jingwei.,Li, Juncheng.,Lin, Yinhe.,Shi, Jian.,Ban, Boyuan.,...&Chen, Jian.(2020).Separation and Recovery of Refined Si from Al-Si Melt by Modified Czochralski Method.MATERIALS,13.
MLA	Li, Jingwei,et al."Separation and Recovery of Refined Si from Al-Si Melt by Modified Czochralski Method".MATERIALS 13(2020).