Displacement Talbot lithography for nano-engineering of III-nitride materials

	Displacement Talbot lithography for nano-engineering of III-nitride materials
刊名	Microsystems & Nanoengineering
	2019
卷号	5
关键词	Technology T Engineering (General). Civil engineering (General) TA1-2040
ISSN号	2055-7434
英文摘要	Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D 2 TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL 2 TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN
语种	英语
CSCD记录号	CSCD:6669385
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/49454]
专题	中国科学院合肥物质科学研究院
推荐引用方式 GB/T 7714	. Displacement Talbot lithography for nano-engineering of III-nitride materials[J]. Microsystems & Nanoengineering,2019,5.
APA	(2019).Displacement Talbot lithography for nano-engineering of III-nitride materials.Microsystems & Nanoengineering,5.
MLA	"Displacement Talbot lithography for nano-engineering of III-nitride materials".Microsystems & Nanoengineering 5(2019).