effectsofannealingtemperatureontheelectricalpropertyandmicrostructureofaluminumcontactonntype3csic

	effectsofannealingtemperatureontheelectricalpropertyandmicrostructureofaluminumcontactonntype3csic
	Dai Chongchong 2; Liu Xuechao 2; Zhou Tianyu 2; Zhuo Shiyi 2; Shi Biao1 ; Shi Erwei 2
刊名	chinesephysicsb
	2014
卷号	23 期号:6
ISSN号	1674-1056
英文摘要	The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. Al contacts with different thickness values are deposited on the 3C-SiC/Si (100) structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and microstructure of Al/3C-SiC structure. The electrical properties of Al contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of Al contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the Al contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 degrees C, and they become Schottky contacts when the annealing temperature is above 650 degrees C. A minimum specific contact resistance of 1.8 x 10(-4) Omega.cm(2) is obtained when the Al contact is annealed at 250 degrees C.
资助项目	[Shanghai Rising-Star Program, China] ; [Young Scientists Fund of the National Natural Science Foundation of China] ; [Innovation Program of the Chinese Academy of Sciences] ; [Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China] ; [National High Technology Research and Development Program of China]
语种	英语
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/9419]
专题	中国科学院重庆绿色智能技术研究院
作者单位	1.中国科学院重庆绿色智能技术研究院 2.中国科学院上海硅酸盐研究所
推荐引用方式 GB/T 7714	Dai Chongchong,Liu Xuechao,Zhou Tianyu,et al. effectsofannealingtemperatureontheelectricalpropertyandmicrostructureofaluminumcontactonntype3csic[J]. chinesephysicsb,2014,23(6).
APA	Dai Chongchong,Liu Xuechao,Zhou Tianyu,Zhuo Shiyi,Shi Biao,&Shi Erwei.(2014).effectsofannealingtemperatureontheelectricalpropertyandmicrostructureofaluminumcontactonntype3csic.chinesephysicsb,23(6).
MLA	Dai Chongchong,et al."effectsofannealingtemperatureontheelectricalpropertyandmicrostructureofaluminumcontactonntype3csic".chinesephysicsb 23.6(2014).