Structural and electronic properties of atomically thin Bismuth on Au(111)

doi:10.1016/j.susc.2018.09.005

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Structural and electronic properties of atomically thin Bismuth on Au(111)
	He, BC ; Tian, G ; Gou, J ; Liu, BX ; Shen, KC ; Tian, QW ; Yu, ZQ ; Song, F ; Xie, HP ; Gao, YL
刊名	SURFACE SCIENCE
	2019
卷号	679 期号:-页码:147—153
关键词	ULTRAVIOLET PHOTOEMISSION EPITAXIAL GRAPHENE MOLECULES MONOLAYERS SYSTEMS GROWTH
ISSN号	0039-6028
DOI	10.1016/j.susc.2018.09.005
文献子类	期刊论文
英文摘要	Atomically thin Bismuth (Bi) films are predicated to be candidates for high temperature quantum spin hall materials. Here, we reported the structural evolutions and the corresponding electronic properties of Bi ultrathin films on Au(111) at initial stage as a function of coverage using low-energy electron diffraction (LEED), scanning tunneling microscopy (STM) and photoemission spectroscopy (PES). The small window for a stable two dimensional (2D) Bi in Kagome and honeycomb lattice on Au(111) has been optimized. LEED and STM results show that Bi atoms self-assemble into dimered (5 x 5) superdots, (root 37 x root 37)R25. 3 degrees in a Kagome lattice and (p x root 3) stripes sequentially in the first monolayer regime and into bi-layered Bi (110) islands afterwards. UPS results show the disappearance of Au(111) surface states at coverage of 0.18 ML, revealing the Van der Waals interactions between Au(111) and Bi adatoms. The repulsive interactions between Bi atoms prevent the 2D Bi structure from islands forming at initial stage and benefit large domains in (root 37 x root 37)R25. 3 degrees Kagome lattice. Such 2D Bi may be interesting because of its relevance in terms of novel physical properties.
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/31828]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Cent S Univ, Coll Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China; 2.Cent S Univ, State Key Lab Powder Met, Changsha 410083, Hunan, Peoples R China; 3.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China; 4.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Pudong New Area, 239 Zhangheng Rd, Shanghai 201204, Peoples R China; 5.Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA; 6.Zhejiang Univ, Coll Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
推荐引用方式 GB/T 7714	He, BC,Tian, G,Gou, J,et al. Structural and electronic properties of atomically thin Bismuth on Au(111)[J]. SURFACE SCIENCE,2019,679(-):147—153.
APA	He, BC.,Tian, G.,Gou, J.,Liu, BX.,Shen, KC.,...&Huang, H.(2019).Structural and electronic properties of atomically thin Bismuth on Au(111).SURFACE SCIENCE,679(-),147—153.
MLA	He, BC,et al."Structural and electronic properties of atomically thin Bismuth on Au(111)".SURFACE SCIENCE 679.-(2019):147—153.