Electronic structure evolution at DBBA/Au(111) interface W/O Bismuth insertion layer

doi:10.1016/j.synthmet.2019.03.016

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Electronic structure evolution at DBBA/Au(111) interface W/O Bismuth insertion layer
	Tian, QW ; He, BC ; Zhao, Y ; Wang, ST ; Xiao, JT ; Song, F ; Wang, Y ; Lu, YH ; Xie, HP ; Huang, H
刊名	SYNTHETIC METALS
	2019
卷号	251 期号:-页码:24—29
关键词	INITIO MOLECULAR-DYNAMICS BOTTOM-UP FABRICATION GRAPHENE NANORIBBONS
ISSN号	0379-6779
DOI	10.1016/j.synthmet.2019.03.016
文献子类	期刊论文
英文摘要	Atomically precise graphene nanoribbons (GNRs) can be on-surface synthesized from halogen containing molecular precursors. Here, we investigated the electronic structure evolution of 10,10'-dibromo-9,9'-bianthracene (DBBA), a famous precursor to 7-AGNRs, on both Au(111) and Bi- 3 x root 3 - Au(111) as a function of film thickness and post-annealing temperature using photoemission spectroscopy, low temperature scanning tunneling microscopy and density functional theories. No obvious changes in electronic structure of DBBA in three STM-observed configurations can be detected, indicating that nonplanar pi-conjugated DBBA is physisorbed on both surfaces. The energy level alignments at the DBBA-substrate interfaces are demonstrated. Bismuth(Bi) insertion layer makes molecular - substrate interaction weaker, and makes the energy levels of DBBA thin film rigidly shift by (similar to)0.70 eV away from Fermi level, which enlarges the hole injection barrier and results in DBBA desorption at (similar to)470 K before dehalogenation occuring. The surface work function reduction can be explained by the push back effect and charge transfer induced interface dipole. Our findings explain why 7-GNRs could not be formed on Bi- 3 x root 3 Au(111).
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/31591]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, 239 Zhangheng Rd, Shanghai 201204, Peoples R China; 2.Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA 3.Zhejiang Univ, Coll Mat Sci & Engn, Hangzhou 310014, Zhejiang, Peoples R China; 4.Cent S Univ, Coll Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China; 5.Cent S Univ, State Key Lab Powder Met, Changsha 410083, Hunan, Peoples R China;
推荐引用方式 GB/T 7714	Tian, QW,He, BC,Zhao, Y,et al. Electronic structure evolution at DBBA/Au(111) interface W/O Bismuth insertion layer[J]. SYNTHETIC METALS,2019,251(-):24—29.
APA	Tian, QW.,He, BC.,Zhao, Y.,Wang, ST.,Xiao, JT.,...&Gao, YL.(2019).Electronic structure evolution at DBBA/Au(111) interface W/O Bismuth insertion layer.SYNTHETIC METALS,251(-),24—29.
MLA	Tian, QW,et al."Electronic structure evolution at DBBA/Au(111) interface W/O Bismuth insertion layer".SYNTHETIC METALS 251.-(2019):24—29.