Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

	Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization
	Zhong, Hai ; Wen, Yan ; Zhao, Yuelei ; Zhang, Qiang ; Huang, Qikun ; Chen, Yanxue ; Cai, Jianwang ; Zhang, Xixiang ; Li, Run-Wei ; Bai, Lihui
刊名	ADVANCED FUNCTIONAL MATERIALS
	2019
卷号	29 期号:2
关键词	ROOM-TEMPERATURE MAGNETORESISTANCE STORAGE SPINTRONICS
DOI	10.1002/adfm.201806460
英文摘要	Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/18675]
专题	2019专题
作者单位	1.Yan, SS (reprint author), Univ Jinan, Spintron Inst, Jinan 250022, Shandong, Peoples R China. 2.Tian, YF (reprint author), Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China. 3.Yan, SS
推荐引用方式 GB/T 7714	Zhong, Hai,Wen, Yan,Zhao, Yuelei,et al. Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization[J]. ADVANCED FUNCTIONAL MATERIALS,2019,29(2).
APA	Zhong, Hai.,Wen, Yan.,Zhao, Yuelei.,Zhang, Qiang.,Huang, Qikun.,...&Tian, Yufeng.(2019).Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization.ADVANCED FUNCTIONAL MATERIALS,29(2).
MLA	Zhong, Hai,et al."Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization".ADVANCED FUNCTIONAL MATERIALS 29.2(2019).