Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

doi:10.1016/j.nanoen.2019.06.007

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2019专题

	Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation
	Yu, J. J.; Liang, L. Y.; Hu, L. X.; Duan, H. X.; Wu, W. H.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Chang, T. C.; Cao, H. T.
刊名	NANO ENERGY
	2019
卷号	62 页码:772-780
关键词	PERSISTENT PHOTOCONDUCTIVITY SYNAPTIC DEVICES MEMORY PLASTICITY
DOI	10.1016/j.nanoen.2019.06.007
英文摘要	Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/18122]
专题	2019专题
作者单位	1.Liang, LY 2.Cao, HT (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Div Funct Mat & Nano Devices, Ningbo 315201, Zhejiang, Peoples R China. 3.Cao, HT (reprint author), Chinese Acad Sci, Key Lab Graphene Technol & Applicat Zhejiang Prov, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Yu, J. J.,Liang, L. Y.,Hu, L. X.,et al. Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation[J]. NANO ENERGY,2019,62:772-780.
APA	Yu, J. J..,Liang, L. Y..,Hu, L. X..,Duan, H. X..,Wu, W. H..,...&Cao, H. T..(2019).Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation.NANO ENERGY,62,772-780.
MLA	Yu, J. J.,et al."Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation".NANO ENERGY 62(2019):772-780.