Memristors based on amorphous ZnSnO films | |
Lu, Bojing; Lu, Yangdan; Zhu, Hangjian; Zhang, Jiaqi; Yue, Shilu; Li, Siqin; Zhuge, Fei; Ye, Zhizhen; Lu, Jianguo | |
刊名 | MATERIALS LETTERS |
2019 | |
卷号 | 249页码:169-172 |
DOI | 10.1016/j.matlet.2019.04.086 |
英文摘要 | Memristors based on amorphous ZnSnO films |
内容类型 | 期刊论文 |
源URL | [http://ir.nimte.ac.cn/handle/174433/18064] |
专题 | 2019专题 |
作者单位 | Lu, JG (reprint author), Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China. |
推荐引用方式 GB/T 7714 | Lu, Bojing,Lu, Yangdan,Zhu, Hangjian,et al. Memristors based on amorphous ZnSnO films[J]. MATERIALS LETTERS,2019,249:169-172. |
APA | Lu, Bojing.,Lu, Yangdan.,Zhu, Hangjian.,Zhang, Jiaqi.,Yue, Shilu.,...&Lu, Jianguo.(2019).Memristors based on amorphous ZnSnO films.MATERIALS LETTERS,249,169-172. |
MLA | Lu, Bojing,et al."Memristors based on amorphous ZnSnO films".MATERIALS LETTERS 249(2019):169-172. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论