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	結晶成長方法
	近藤 正彦; 皆川 重量; 梶村 俊
	1998-09-18
著作权人	株式会社日立製作所
专利号	JP2828979B2
国家	日本
文献子类	授权发明
其他题名	結晶成長方法
英文摘要	PURPOSE:To enable forming a heterojunction between materials having different crystal structures, by using the so-called atomic layer epitaxial growth method wherein a crystal is grown one atomic layer by one atomic layer, by supplying anion and cation alternately in time domain, to the boundary surface of solid phase crystal growth. CONSTITUTION:The face (100) of zinc blended structure crystal is alternately laminated with monoatomic layers of anion and cation. In the case where the surface of the face (100) is formed by anion, when cation of a material, which originally has wurtzite structure, reaches the surface, bond to take wurtzite structure does not come out, so that it is taken in a lattice position of cation of the wurtzite structure. In this manner, by supplying anion and cation alternately in time domain to the growth boundary surface, the one which is originally wurtzite structure is turned into zinc blende structure being crystal structure of substrate, and excellent heterojunction is obtained.
公开日期	1998-11-25
申请日期	1987-12-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81846]
专题	半导体激光器专利数据库
作者单位	株式会社日立製作所
推荐引用方式 GB/T 7714	近藤 正彦,皆川 重量,梶村 俊. 結晶成長方法. JP2828979B2. 1998-09-18.

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