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	Distributed feedback type semiconductor laser
	OSHIMA MASAAKI
	1986-06-21
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1986134096A
国家	日本
文献子类	发明申请
其他题名	Distributed feedback type semiconductor laser
英文摘要	PURPOSE:To improve reproducibility by stably controlling the depth of a diffraction grating and introducing an unevenness which does not deform even at high temperature, by a method wherein the diffraction grating layer is composed of a plurality of InP layers in selective contact with an InGaAsP stop layer, a double-layer structural projection consisting of an InGaAsP layer provided with an InP layer, and an InGaAsP waveguide layer. CONSTITUTION:An N type InP layer 2 produced on an N type InP substrate 1 by the first grown, an N type InGaAsP etching stop layer 9, an N type InP layer 10, and an N type InGaAsP deformation-preventing layer 11 form a diffraction grating at periods of about 2,200Angstrom . After formation of the diffraction grating, an InGaAsP waveguide layer 4, an N type InGaAsP light emitting layer 5, a P type InP layer 6, and a P type InGaAsP layer 7 are grown by the second growth, and electrodes 8 and 9 are installed, resulting in the completion of an element. The part of diffraction grating is coated with resist after the first growth, and this resist is exposed by irradiation with interference fringes of ultraviolet laser into a resist film 12. When such a wafer is etched with etchant, an N type InP layer 10 etched only in the surface InGaAsP layer 11 is exposed.
公开日期	1986-06-21
申请日期	1984-12-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81600]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	OSHIMA MASAAKI. Distributed feedback type semiconductor laser. JP1986134096A. 1986-06-21.

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