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	Manufacture of semiconductor laser
	IMANAKA KOUICHI
	1984-11-29
著作权人	OKI DENKI KOGYO KK
专利号	JP1984210680A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To control a transverse mode excellently while removing a leakage path by attaching an insulator mask with a striped window to a substrate, cutting a groove at the window section and forming each layer to the upper and lower sections of the window by one-time growth. CONSTITUTION:An insulating mask 3 to which a window 2 is bored to a striped shaped is attached onto an N type InP substrate The substrate 1 is melted back by an unsaturated InP solution. Consequently, a groove is formed to the substrate 1 of the window 2 section. An N-InP clad layer 5, a GaInAsP active layer 6 and a P-InP clad layer 7 are shaped to the upper and lower sections of the window 2 by one-time growth by using selective liquid-phase epitaxial growth. A minus electrode 8 and a plus electrode 9 are formed. According to such manufacture, electrons and holes recombine and emit light in the layer 6, and there is no leakage path because there is the mask 3 between the electrode 8 and the substrate 1 on a laser oscillation. A transverse mode is controlled excellently because the side surface of the layer 6 is coated with InP of a high refractive index.
公开日期	1984-11-29
申请日期	1983-05-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81551]
专题	半导体激光器专利数据库
作者单位	OKI DENKI KOGYO KK
推荐引用方式 GB/T 7714	IMANAKA KOUICHI. Manufacture of semiconductor laser. JP1984210680A. 1984-11-29.

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