QQ客服 官方微博 反馈留言

	Semiconductor laser device
	TANAKA TOSHIO; KUME ICHIROU; SOGOU TOSHIO; TAKAMIYA SABUROU
	1983-12-27
著作权人	MITSUBISHI DENKI KK
专利号	JP1983225682A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain the lateral junction stripe laser having an ion laser oscillation threshold current and excellent temperature characteristics by a method wherein, among the DC resistors located on a diode, especially the P-side DC resistor which produces a great influence is formed smaller in size. CONSTITUTION:Clad layers 2 and 4, consisting of AlyGa1-yAs (y>x), is grown on a semiinsulating GaAs substrate 1 astriding an AlxGa1-xAs active layer 3, and a GaAs control layer 5 is provided at both end parts on the surface of the layer 4. Then a P type drive region 7a, penetrating to inside the substrate 1 from the layer 4, is formed by diffusion in the center part of the above laminated material, and an active region 8 consisting of an active layer 3 is generated at the intermediate part of said region 7a. Also, a P type region 6a is formed by diffusion on the whole region on one side of the region 7a, and the other side is left untouched. Subsequently, an N-side electrode 9 is ocated on the contact layer 5 and a P-side electrode 10 is coated on the entire back side of the substrate Thus, regions 6a and 7a reaching the back side of the substrate 1 are provided, and the DC resistance on the P-side is reduced to one fourth or below, thereby enabling to lessen the oscillation threshold current.
公开日期	1983-12-27
申请日期	1982-06-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81442]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KK
推荐引用方式 GB/T 7714	TANAKA TOSHIO,KUME ICHIROU,SOGOU TOSHIO,et al. Semiconductor laser device. JP1983225682A. 1983-12-27.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。