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	Semiconductor light emitting element
	TSUNODA ATSUISA; TAKAHASHI KOUSEI; HOSODA MASAHIRO
	1992-05-21
著作权人	シャープ株式会社
专利号	JP1992147687A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting element
英文摘要	PURPOSE:To obtain a semiconductor light emitting element which controls a lateral mode with high reproducibility and is not early deteriorated even in operation by a high output by providing an etching stop layer on a second clad layer, and providing a third clad layer on the stop layer. CONSTITUTION:A p-type GaAs second contact layer 109 is etched in a stripe state by using a GaAs selective etchant. Then, a p-type Ga0.5In0.5P first contact layer 108 is etched in a stripe state. After a resist pattern 110 is removed, with the stripelike layer 109 and the layer 108 as masks a p-type (Al0.7Ga0.3)0.5 In0.5P third clad layer 107 is etched in a stripe state. Thus, a p-type GaAs third contact layer 111 is so grown by an MBE method as to bury the layers 107, 108 and 109 in an exposed p-type Ga0.5In0.5P etching stop layer 106.
公开日期	1992-05-21
申请日期	1990-10-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81191]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	TSUNODA ATSUISA,TAKAHASHI KOUSEI,HOSODA MASAHIRO. Semiconductor light emitting element. JP1992147687A. 1992-05-21.

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