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	A semiconductor laser device
	STEPHEN PETER NAJDA
	2004-03-31
著作权人	SHARP KABUSHIKI KAISHA
专利号	GB2346735B
国家	英国
文献子类	授权发明
其他题名	A semiconductor laser device
英文摘要	An SCH laser device fabricated in the (Al,Ga,In)P system has an active region (13) disposed within an optical guiding region (12, 14). The optical guiding region (12,14) is disposed between an n-doped cladding region (11) and a p-doped cladding region (15). Optical confinement layers (16, 17), are disposed at the interfaces between the optical guiding region (12, 14) and the cladding regions (11, 15). The optical confinement regions produce increased confinement of the optical field, and reduce the penetration of the optical field into the cladding regions. The optical confinement region (17) on the p-side of the device also serves as a potential barrier to the transport of electrons into the p-doped cladding region (15). The cladding regions (11,15) have a low Al mole fraction, so that they have a direct bandgap.; This prevents carrier loss by trapping in the DX level in the cladding regions. In an alternative embodiment, the cladding regions have a graded composition, with their composition at the interface with the optical confinement layers (16, 17) being such that the DX level in the cladding regions is degenerate with the X-conduction band in the optical confinement layers (16, 17). The energy of the DX level in the cladding region is greater than the Fermi level in the cladding region, and the energy of the DX level increases away from the optical guide region.
公开日期	2004-03-31
申请日期	1999-02-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81075]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	STEPHEN PETER NAJDA. A semiconductor laser device. GB2346735B. 2004-03-31.

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