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	Semiconductor laser device
	KAJIMURA TAKASHI; KURODA TAKARO; YAMASHITA SHIGEO; NAKAMURA MICHIHARU; UMEDA JUNICHI
	1986-06-30
著作权人	HITACHI LTD
专利号	JP1986142786A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To decrease stress applied on an active layer, by forming a layer made of one material, which is selected among (GaAl)As, Ga(AsSb), or (InGa)As on a substrate, and forming a GaAlAs double heterostructure on the layer. CONSTITUTION:On a substrate, a layer made of one material selected among (GaAl)As, Ga(AsSb) or (InGa)As is formed. Multilayer films, having a GaAlAs double heterostructure is formed on said layer. For example, on a Ga1-xAlxAs mixed crystal substrate (0.02<=x<=0.4) 1, an N type Ga1-yAlyAs layer (0.5<=y<=0.8) 2, a Ga1-zAlzAs layer (0.15<=z<=0.35) 3, a P type Ga1-uAluAs layer (0.5<=u<=0.8)4 and P type GaAs layer 5 are grown by a liquid phase epitaxial method. Thereafter, a Zn diffused region 8, a P-side electrode 7 and an N-side electrode 6 are formed.
公开日期	1986-06-30
申请日期	1985-10-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80948]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	KAJIMURA TAKASHI,KURODA TAKARO,YAMASHITA SHIGEO,et al. Semiconductor laser device. JP1986142786A. 1986-06-30.

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