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	Manufacture of semiconductor light emitting device
	HIRANO RIYOUICHI; OOMURA ETSUJI; HIGUCHI HIDEYO; SAKAKIBARA YASUSHI; NAMISAKI HIROBUMI; SUZAKI WATARU
	1984-07-06
著作权人	MITSUBISHI DENKI KK
专利号	JP1984117288A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor light emitting device
英文摘要	PURPOSE:To prevent deterioration in electric characteristics of a device even at a high temperature during the current conduction for a long time, by the constitution, wherein different conducting type impurities are diffused in a region forming a crystal interface, and the position of a P-N junction is moved from the interface to the inside or to the outside. CONSTITUTION:The carrier concentration of P-type impurities in a P-InP layer 4 is denoted as Np, and the carrier concentration of N-type impurities in an N-InP layer 1, which is a substrate is denoted as Nn. In this case the relationship Np>Nn is established. For example, Zn, whose diffusion is easy, is selected as the P type impurities. An InGaAsP active layer is P-type. Then, the position of the P-N junction, which is exposed to the initial atmosphere, A, B, and C, and D, E, and F is moved to the position A', B', and C', and D', E', and F' in the N-InP layer In this constitution, the exposed P-N junction interface, which becomes the cause of deterioration at a high temperature, is eliminated. As a result, a current can be concentrated in the active region 2a.
公开日期	1984-07-06
申请日期	1982-12-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79293]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KK
推荐引用方式 GB/T 7714	HIRANO RIYOUICHI,OOMURA ETSUJI,HIGUCHI HIDEYO,et al. Manufacture of semiconductor light emitting device. JP1984117288A. 1984-07-06.

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