QQ客服 官方微博 反馈留言

	Light emitting semiconductor devices
	HARTMAN, ROBERT L.; KOSZI, LOUIS A.; SCHUMAKER, NORMAN E.
	1982-01-26
著作权人	BELL TELEPHONE LABORATORIES, INCORPORATED
专利号	US4313125
国家	美国
文献子类	授权发明
其他题名	Light emitting semiconductor devices
英文摘要	A double heterostructure light emitting semiconductor device is described wherein a narrow bandgap active region is sandwiched between two wider bandgap cladding layers, one of which contains a p-n homojunction. The purpose is to separate the p-n junction from the active region and, thus, to have the active region bounded by two isotype (p-p or n-n) heterojunctions. This configuration significantly reduces nonradiative interface recombination current which occurs principally at the anisotype (p-n) heterojunction in a standard double heterostructure.
公开日期	1982-01-26
申请日期	1979-06-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79260]
专题	半导体激光器专利数据库
作者单位	BELL TELEPHONE LABORATORIES, INCORPORATED
推荐引用方式 GB/T 7714	HARTMAN, ROBERT L.,KOSZI, LOUIS A.,SCHUMAKER, NORMAN E.. Light emitting semiconductor devices. US4313125. 1982-01-26.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。