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	Semiconductor light emitting element
	MIHASHI HIROSHI; HIRAHARA KEIJIRO; KAMATA ATSUSHI
	1989-09-25
著作权人	TOSHIBA CORP
专利号	JP1989239889A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting element
英文摘要	PURPOSE:To obtain a short wavelength semiconductor laser having a long life, by using (Cu, Ag)(Al, Ga, In)(S, Se, Te)2 as a second clad layer, using Zn(S, Se, Te) whose forbidden band width is narrower than that of the second clad layer as an active layer, and using Zn(S, Se, Te) whose forbidden band width is larger than that of the active layer as a first clad layer. CONSTITUTION:An active layer 14 is held with first and second clad layers 13 and 15 whose forbidden band widths are larger than that of the active layer on a semiconductor substrate 12. A double hetero-structure is formed in this semiconductor light emitting element. The substrate 12 comprises a semiconductor single crystal whose lattice constant is larger than ZnS and smaller than ZnTe. The first clad layer 13 comprises ZnSxSeyTe1-x-y. The active layer 14 comprises ZnSxSeyTe1-x-y. The second clad layer 15 comprises CusAg1-sAltGauIn1-t-u(SvSewTe1-v-w)2. They are formed in the order of the second clad layer 15, the active layer 14, the first clad layer 13 and the substrate 12. Or they are formed in the order of the first clad layer 13, the active layer 14, the second clad layer 15 and the substrate 12. The lattice constants of the semiconductor layers 12-15 are made to agree or approximately agree.
公开日期	1989-09-25
申请日期	1988-03-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78864]
专题	半导体激光器专利数据库
作者单位	TOSHIBA CORP
推荐引用方式 GB/T 7714	MIHASHI HIROSHI,HIRAHARA KEIJIRO,KAMATA ATSUSHI. Semiconductor light emitting element. JP1989239889A. 1989-09-25.

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