Semiconductor laser and manufacture thereof
SASAI YOICHI; ISHINO MASATO; MATSUI YASUSHI; ODANI JIYUN; OGURA MOTOTSUGU; SERIZAWA AKIMOTO
1990-03-01
著作权人MATSUSHITA ELECTRIC IND CO LTD
专利号JP1990062091A
国家日本
文献子类发明申请
其他题名Semiconductor laser and manufacture thereof
英文摘要PURPOSE:To improve optical coupling efficiency and hence assure a low threshold current by flattening the surface of an optical coupling section of an IPC (integrated passive cavity) laser as a composite resonator type semiconductor laser. CONSTITUTION:There are formed by a first growing process a substrate 1, an optical guide layer 2, a separation layer 3, an active layer 4, and an optical confinement layer 5. A buried layer is formed on an epitaxial wafer subjected to mesa formation by a second growing process. The buried layer comprises a P type InP layer 6, an n type InP layer 7, a P type InP layer 8, and a P type InGaAsP layers. The optical confinement layer 5 is thick. Accordingly, when the second growing process is effected by a liquid phase growing process, the InP layer 6 and the InP layer 7 are not grown on a mesa upper surface if mesa stripe width W is narrower as being less than 5mum. Thus, the surface in the vicinity of the mesa upper portion is flattened. Hereby, optical coupling efficiency is improved and hence a low threshold current is assured.
公开日期1990-03-01
申请日期1988-08-29
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/78512]  
专题半导体激光器专利数据库
作者单位MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式
GB/T 7714
SASAI YOICHI,ISHINO MASATO,MATSUI YASUSHI,et al. Semiconductor laser and manufacture thereof. JP1990062091A. 1990-03-01.
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