QQ客服 官方微博 反馈留言

	Semiconductor laser device
	GOTO YUKIO; MIHASHI YUTAKA
	1988-04-12
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1988081886A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To reduce heat generation in the cladding layers of an AlGaInP system visible light semiconductor laser device and improve its temperature characteristics, life characteristics and so forth by forming current injection regions which have a conductivity type same as the cladding layers and a resistance lower than those of the cladding layers. CONSTITUTION:A current applied between a positive side electrode 18 and a negative side electrode 19 does not flow through regions where N-type GaAs current blocking regions are provided but flows through P-type GaAs current injection regions 20 and 2nd P-type (AlxGa1-x)0.5In0.5P cladding layer 17 and the part of a P-type Ga0.5In0.5P active layer 13 beneath the regions 20 and 17 is made to be an effective oscillation region and a laser oscillation is generated in that part. At that time, while the specific resistivity of the 2nd cladding layer 17 is about 10OMEGAcm, the specific resistivity of the P-type GaAs current injection region 20 can be less than 10OMEGAcm and, moreover, the resistivity of 1st P-type cladding layer 14 can be also reduced by diffusion in the part beneath the regions 20 and 17. Therefore, the resistance of the whole P-type cladding layers at the time of laser operation can be reduced to approximately a half so that the heat generation in that region can be significantly reduced.
公开日期	1988-04-12
申请日期	1986-09-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78317]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	GOTO YUKIO,MIHASHI YUTAKA. Semiconductor laser device. JP1988081886A. 1988-04-12.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。