| Semiconductor laser | |
| KAJIMURA TAKASHI; KANEHISA OSAMU; SAITO KATSUTOSHI | |
| 1989-06-30 | |
| 著作权人 | HITACHI LTD |
| 专利号 | JP1989166588A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve heat radiation efficiency at a semiconductor laser edge side and to prevent heat generation due to optical absorption at the edge side by forming ZnxSe1-x(0 direction. Then Zn is diffused in the diffusion holes and a current path which reaches the layer 4 through the layer 5 is formed on a trapezoid groove. Then p side and n side electrodes 6, 7 are formed and a laser chip having a desired length of a resonator is constituted. The chip is put in low pressure MOCVD equipment then a ZnSSE film 8 of a desired thickness which is relevant to half of the laser oscillation wavelength is formed on both the end sides of the resonator of the chip at a predetermined temperature, thus increasing the heat radiation effect of the edge side. |
| 公开日期 | 1989-06-30 |
| 申请日期 | 1987-12-23 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78287]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAJIMURA TAKASHI,KANEHISA OSAMU,SAITO KATSUTOSHI. Semiconductor laser. JP1989166588A. 1989-06-30. |
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