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	FUJII SADAO; UMENO MASAYOSHI
	1993-02-03
著作权人	KANEGAFUCHI KAGAKU KOGYO KK
专利号	JP1993008857B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To provide InxGa1-xAsyP1-y crystal having a half-width of photo luminescence spectrum below 40 meV at an ambient temperature and having a large Ga content, by constituting a substrate of specific gallium arsenide phosphide, and by growing with liquid growth using In as a melt. CONSTITUTION:A substrate is made of GaAs1-zPz (0<=z<=0.5) crystal. Selecting a Ga content in a melt being In from among a range above the threshold Ga concentration and selecting an As content from among a range below the threshold As concentration, liquid phase epitaxial growth is executed. The z of the GaAs1-zPz substrate is required to be z>=0.5, and is preferably z<=0.4. In particular, for the purpose of providing a light emitting device of a visible light range, it is more preferable to be z>=0. Within In to be used as a melt, raw materials of Ga, As and P for growing InxGa1-xAsyP1-y crystal are contained. A Ga raw material such as metal Ga, InGa alloy, GaP or GaAs, an As raw material such as As, As4, GaAs or InAs, and a P raw material such as P4, InP or GaP, may be employed.
公开日期	1993-02-03
申请日期	1985-03-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77903]
专题	半导体激光器专利数据库
作者单位	KANEGAFUCHI KAGAKU KOGYO KK
推荐引用方式 GB/T 7714	FUJII SADAO,UMENO MASAYOSHI. -. JP1993008857B2. 1993-02-03.

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