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	Manufacture of semiconductor laser
	TAKAHASHI SHOGO
	1989-08-29
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989215084A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To make it possible to control the flow of a water surface and to make a device an OEIC easily as to adopt a multiple quantum well(MQW) structure for an active layer, by forming a first region to form a p-n junction by ion implantation or by both ion implantation and form a p-n junction by ion implantation or by both ion implantation and thermal diffusion. CONSTITUTION:Using an SiN film 6 as a mask, selective diffusion is conducted from above a wafer on which a clad layer 2, an active layer 3, a clad layer 4 and a contact layer 5 are deposited in this order, to form an p diffusion area 7 as a second region. Nextly, the contact layer 5 near an pn junction is removed by etching and ions are implanted to form a (p) ion implantation region 9 as a first region. After that, a device is annealed and the SiN film 6 is removed to recover the device from a damage including lattice defect caused by ion implantation. Then, an (n) electrode 11 and a (p) electrode 12 are formed to complete the device. By this method, a time-consuming high temperature driving process can be omitted and the wafer surface is kept from becoming rough and the device can be made an OEIC easily. Even if an MQW structure is adopted for an active layer, a high-efficiency TJS laser can be gained without losing the order.
公开日期	1989-08-29
申请日期	1988-02-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77314]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	TAKAHASHI SHOGO. Manufacture of semiconductor laser. JP1989215084A. 1989-08-29.

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