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	Semiconductor laser element and manufacture thereof
	YAMAMOTO SABURO; YAMAMOTO OSAMU; NAKATSU HIROSHI; OBAYASHI TAKESHI
	1991-09-11
著作权人	シャープ株式会社
专利号	JP1991208390A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element and manufacture thereof
英文摘要	PURPOSE:To make possible an oscillation in a stable fundamental transverse mode in high output by a method wherein the laser element is provided with window regions formed on both edges in the lengthwise direction of an internal excitation region and an active layer is formed only in a mesa type multilayer structure at the internal excitation region. CONSTITUTION:A striped optical waveguide is obtained by an effective refractive index distribution, which is caused through partial absorption generated from an active layer 4, in both shoulder parts of a channel groove formed in a GaAs substrate A striped mesa of a width wider than that of this effective refractive index waveguide is formed by etching away heterojunction structures 2 to 6 on both sides of the waveguide until the structures 2 to 6 reach a GaAs current stopping layer 10. After that, a growth of a regrowth clad layer 7 is first caused on the layer 10 and after the layer 7 is grown in the height of a light guide layer 3, a growth front proceeds from both ends of the GaAlAs light guide layer 3 toward the central part of the layer 3 and the whole surface of the exposed layer 3 is covered with the regrowth GaAlAs layer. Thereby, a semiconductor laser element can be made to oscillate in a stable fundamental transverse mode even in a high output operation.
公开日期	1991-09-11
申请日期	1990-01-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77003]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	YAMAMOTO SABURO,YAMAMOTO OSAMU,NAKATSU HIROSHI,et al. Semiconductor laser element and manufacture thereof. JP1991208390A. 1991-09-11.

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